Gaidar, G. P. “Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of N Si Doped With Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique”. Physics and Chemistry of Solid State 19, no. 1 (March 15, 2018): 40–47. Accessed November 23, 2024. https://vps.pnu.edu.ua/index.php/pcss/article/view/76.